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Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
IXFN90N30
VDSS ID25
RDS(on)
= 300 V = 90 A = 33 mW
D
trr 250 ns
G S S
Maximum Ratings 300 300 20 30 90 360 90 64 3 5 560 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features
* International standard package * miniBLOC, with Aluminium nitride
isolation
* Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS)
rated
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
* Low package inductance * Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2 4 100 TJ = 25C TJ = 125C 100 2 33 V V nA mA mA mW
* DC-DC converters * Battery chargers * Switched-mode and resonant-mode
power supplies
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
* DC choppers * Temperature and lighting controls
Advantages
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 %
* Easy to mount * Space savings * High power density
98540 (9/98)
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
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IXFN 90N30
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 70 10000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 700 42 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 55 100 40 360 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 180 0.22 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 90 360 1.5 250 1.4 10 A A V ns mC A
IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 50A, -di/dt = 100 A/ms, VR = 100 V
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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